RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz
Features
N-Channel Enhancement DMOS Structure Lower Capacitances for ...
RF MOSFET Power
Transistor, 2OW, 28V 100 - 500 MHz
Features
N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Operation Devices High Saturated Output Power Lower Noise Figure Than Competitive . . Mode Device
UF2820R
Absolute Maximum Ratings at 25°C
Parameter Drain-SourceVoltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature StorageTemperature Thermal Resistance 1 Symbol 1 VOS VGS IOS
PO
Rating 6.5 20 4 61 200 -55 to +150 2.66
Units V V A w “C “C “C/W
T TST0 8JC
Electrical Characteristics
at 25°C
Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Cass CRss GP
00
V,,=28.0 V, F=l .OMHz 30 8 10 50 2O:l PF PF dB % V,,=28.0 V, F=l .OMHz V,,=28.0 V, F=l .OMHz V,,=28.0 V, 1,,=100.0 mA, P,fl20.0 V,,=28.0 V, I,,=1 00.0 mA, P,s20.0 V,,=28.0 V, l,,=lOO.O mA, P,e20.0 W, F=500 MHz W, F=500 MHz W, F=500 MHz
VSWR-T
Specifications Subject
to Change
Without Notice.
MIA-COM,
Inc.
RF MOSFET Power
Transistor,
2OW, 28V
UF2820R
v2.00
Typical Broadband
Performance
Curves
EFFICIENCY
I’,,=28 ‘OF
GAIN vs FREQUENCY
VD,=28 V I,,=1 00 mA PO,,,=20 W
vs FREQUENCY
W
V IDD=l 00 mA PO,=20
10 100
.T
I
200
300 FREQUENCY (MHz)
400
5w
100
200
300 FREQUENCY (MHz)
500
POWER OUTPUT
25
vs POWER INPUT
mA
25
POWER OUTPUT vs POWER INPUT
V,,=28 V
I,,=1 00 mA
V,,=28
V I,,=100
0
01
0.1
0.2
0.3
0.5
1.0
1.5
2.0
0.1
02
0.3
0.5
1.0
1.5
2.0
POWER INPUT (W)
POWER ...
