RF MOSFET Power 100 - 500 MHz
Features
l l l l l
Transistor,
2OW, 28V
UF2820P
v2.00
N-Channel Enhancement DMOS Struct...
RF MOSFET Power 100 - 500 MHz
Features
l l l l l
Transistor,
2OW, 28V
UF2820P
v2.00
N-Channel Enhancement DMOS Structure Lower Capacitances Lower Noise Floor
Mode Device Operation
for Broadband
Common Source Configuration
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Drain-Source Voltage 1 Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature I StorageTemperature 1 Thermal Resistance I I
V05 VGS IDS PD T, TSTG I
65 20 2.8 53 200 1 -55to+150 I I
V v A W “C “C ( I
Electrical Characteristics
Parameter
at 25°C
Symbol Min Max Units lest Conditions
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current GateThreshold Voltage Forward Transconductance _Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance * Per Side
Specifications
I
BV,,, ‘DSS ‘ass VGWHI GM CES Cass CRSS G. /
qD I
65 1
2.0 1 2.0
V mA , pA V S pF pF pF
I
V,,=O.O V, 1,,=4.0 mA‘ V,,=28.0 V, V,,=O.O V’
I I
V&20 V&O.0 V&O.0
v, v,,=o.o V’ V, 1,,=200.0 mA’ V, 1,,=200.0 mA, AV,,=l .O V, 80 us Pulse’
2.0 .160
6.0 14 10 4.8
V,,=28.0 V, F=l .OMHz’ ‘.‘,,=28.0 V, F=l .OMHz’ V,,=28.0 V, F=l .OMHz’ V,,=28.0 V, 1,,=200.0 mA. P“VI -.._=20.0 W. F=500 MHz --~ -V,D=28.0 V, 1,,=200.0 mA, P,U,=20.0 W, F=500 MHz 1 ( V,,=28.0 V, 1,,=200.0 mA, P,,p20.0 W, FSOO MHz
10 50 -
,
-
dB
VSWR-T
% I I 1 2O:l 1 -
1
Subject to Change Without Notice.
MIA-COM,
inc.
RF MOSFET Power
Transistor,...
