RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz
Features
N-Channel Enhancement DMOS Structure Lower Capacitances Mod...
RF MOSFET Power
Transistor, iOOW, 28V 100 - 500 MHz
Features
N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device Operation Devices
UF281 OOH
for Broadband
High Saturated Output Power Lower Noise Figure Than Competitive
Input Capacitance Qutput Capacitance ReverseCapacitance Power Gain Drain Efficiency Return Loss Load Mismatch Tolerance
* Per Side
c IS C OS C RSS GP % RL VSWR-T
-
13.5
pF PF pF dB % dB
-
V,,=28.0
V, F=l .O MHz’
90
‘24
VD,=28.0 V, F=l.O MHz’ V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0
V,,=28.0
V, F=l .O MHz‘ V, 1,,=800.0 mA, P,ylOO.O V, l,0=600.0 mA, P,&OO.O V, 1,,=600.0 mA, P,elOO.O V, 1,,=600.0 mA, P,,~lOO.O W, F=500 MHz W, F&O0 MHz W, F=500 MHz W, F=500 MHz
10 50
10
3O:l
-
RF MOSFET Power
Transistor,
IOOW, 28V
UF281OOH
v2.00
Typical Broadband Performance
Curves
EFFICIENCY
P,,=lO W I,,=600 80-
vs FREQUENCY
mA (Push-Pull Device)
120 100 So 60 40 20
POWER OUTPUT
vs SUPPLY
VOLTAGE
P,,=lO W I,,=600
mA F=500 MHz
401
100
. .
200 300 400
I
SW
0 14 16 20 24 28 32
FREQUENCY (MHz)
SUPPLY VOLTAGE (V)
POWER OUTPUT vs POWER INPUT
V,,=28 V I,,=600 mA (Push-Pull Device)
0 0 1 2 4 6 8 10 12
POWER INPUT (W)
RF MOSFET Power
Transistor,
lOOW, 28V
UF281 OOH
v2.00
Typical Device Impedance
Frequency (MHz) 100 300 500
Z,, (OHMS) 4.5 - j 6.0 2.25 - j 1.75 1.5 + j 5.5 V,,=28 V, I,,=gOO mA, P,,=lOO.O Watts
Z LoAD (OHMS) 14.5 + j 0.5 7.5 + j 1.O 3.5 - j 3.5 .I
Z,, is the series equivalent input impedance of the device from gate to ga...
