= EC
----z =
an AMP company
RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz
Features
l l l l l l
UF28156
v2.00
N...
= EC
----z =
an AMP company
RF MOSFET Power
Transistor, 15W, 28V 100 - 500 MHz
Features
l l l l l l
UF28156
v2.00
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation
Absolute Maximum Ratings at 25°C
L n
3.66 .lO
4.32 35
344 JJ04 1
.l70 DO6
Electrical Characteristics
at 25°C
InputCapacitance Output Capacitance ReverseCapacitance Power Gain Drain Efficiency Load Mismatch Tolerance Ccm CRSS GP ‘7D VSWR-T 10 50 15 7.2 2O:l pF pF dB % -
V,,=28.0 V, F=l .O MHz Vos=28.0 V, F=l .OMHz V,,=28.0 V. F=l .OMHz V,,=28.0 V, 1,,=150.0 mA, P,,$5.0 V,,=28.0 V, I,,=1 50.0 mA, P,,~l5.0 V,,=28.0 V, 1,,=150.0 mA, P,,,=l5.0 W, F&O0 MHz W, F=500 MHz W. F=500 MHz
Specifications
Subject to Change Without Notice.
M/A-COM,
inc.
RF MOSFET Power
Transistor,
15W, 28V
UF2815B
v2.00
Typical Broadband Performance
Curves
POWER OUTPUT
I
CAPACITANCES
16 ,
vs VOLTAGE
vs VOLTAGE
MHz
F=l .O MHz
P,,=l .O W IDO= 50 mA F&O0
10 5 t a-
.
2r
5
10
15 ",, (")
20
2.5
30
GAIN vs FREQUENCY
v,,r28 V P,,=15 W lDQ=lOO mA
70
EFFICIENCY
vs FREQUENCY
mA PO,,=15 W
VDD=28 V I,,=150
“I
I
0 loo 200 300 400 500
50 loo 200 300 400 500
FREQUENCY (MHz)
FREQUENCY (MHz)
POWER OUTPUT vs POWER INPUT
Vo,=28 V IDo= 50 mA
I
0.08
0.1
0.25
POWER INPUT(W)
Specifications Subject to Change Without Notice.
M/A-COM,
Inc.
RF MOSFET Power
Transistor,
15W, 28V
UF2815B
v2.ocl
Typical ...