DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3570
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3570 is N-channel...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3570
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
5
ORDERING INFORMATION
PART NUMBER 2SK3570 2SK3570-S 2SK3570-ZK PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note
FEATURES
4.5V drive available. Low on-state resistance, RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) Built-in gate protection diode Surface mount device available
2SK3570-Z
Note TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
20 ±20 ±48 ±160 1.5 29 150 −55 to +150
V V A A W W °C °C
Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty Cycle ≤ 1%
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D16256EJ2V0DS00 (2nd edition) Date Published Septemb...