2SK3571

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3571 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 5 ORDERING INFORMATION PART NUMBER 2SK3571 2SK3571-S 2SK3571-ZK PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES 4.5V drive available. Low on-state resistance, RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) Built-in gate protection diode Surface mount device available 2SK3571-Z Note TO-220SMD package is produced only in Japan. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±20 ±48 ±192 1.5 40 150 −55 to +150 V V A A W W °C °C Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16257EJ2V0DS00 (2nd edition) Date Published Septem...