Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3576
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SK3576 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
2.8 ±0.2
PACKAGE DRAWING (Unit: mm)
0.4 +0.1 –0.05 0.16+0.1 –0.06
0.65–0.15
+0.1
3
FEATURES
• 2.5V drive available • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A) RDS(on)3 = 75 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
1.5
0 to 0.1
1 2
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 ±0.2
ORDERING INFORMATION
PART NUMBER 2SK3576 PACKAGE SC-96 (Mini Mold Thin Type)
1 : Gate 2 : Source 3 : Drain
Marking: XK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse)
Note1
EQUIVALENT CIRCUIT
VDSS VGSS ID(DC) 20 ±12 ±4.0 ±16 0.2 1.25 150 –55 to +150 V V A A W W °C °C
Gate Body Diode Drain
ID(pulse) PT1
Note2
Total Power Dissipation (TA = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec.
PT2 Tch Tstg
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15939EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan
©
2001
2SK3576
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = 16 V VGS = 4.0 V ID = 4.0 A IF = 4.0 A, VGS = 0 V TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = ±12 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 2.0 A VGS = 4.5 V, ID = 2.0 A VGS = 4.0 V, ID = 2.0 A VGS = 2.5 V, ID = 2.0 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 10 V, ID = 2.0 A VGS = 4.0 V RG = 10 Ω 0.5 1.0 40 42 56 250 80 60 28 140 110 180 3.3 0.7 1.5 0.89 50 53 75 MIN. TYP. MAX. 10 ±10 1.5 UNIT
µA µA
V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL VGS PG. RG
Wave Form
VGS
0 10% VGS 90%
IG = 2 mA 50 Ω
RL VDD
VDD
PG.
90%
VDS
90% 10% 10%
VGS 0 τ τ = 1 µs Duty Cycle ≤ 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
2
Data Sheet D15939EJ1V0DS
2SK3576
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120 1.5
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
80
PT - Total Power Dissipation - W
100
1.25
1
60
0.75
40
0.5
20
0.25
0 0 20 40 60 80 100 120 140 160
0 0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA
100 R DS(on) Lim ited (V GS = 4.5 V) ID(pulse) 10
TA - Ambient Temperature - °C
ID - Drain Current - A
I D(DC)
PW = 1 m s
1 10 m s 0.1 Single Pulse Mounted on FR-4 board of 50 m m × 50 m m × 1.6 m m 0.01 0.1 1 10 100 100 m s 5s
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
Single Pulse W ithout board
100
Mounted on FR-4 board of 50 mm × 50 mm × 1.6 mm 10
1
1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D15939EJ1V0DS
3
2SK3576
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
20 Pulsed 16 V GS = 4.5 V 4.0 V 10 1 100 V D S = 10 V
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
12
ID - Drain Current - A
0.1 0.01 0.001 0.0001
8 2.5 V
T A = 125 ° C 75°C 25°C − 25°C
4
0 0.0 0.2 0.4 0.6 0.8 1.0
0.00001 0 1 2 3
VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
1.5
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100 V DS = 10 V
VGS(off) – Gate Cut-off Voltage - V
V DS = 10 V ID = 1 mA
| yfs | - Forward Transfer Admittance - S
10
1
1
T A = 125 ° C 75°C 25°C − 25°C
0.1
0.5 -50 0 50 100 150
0.01 0.01
0.1
1
10
100
Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STA.