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C5552 Datasheet, Equivalent, 2SC5552.2SC5552 2SC5552 |
| Part | C5552 |
|---|---|
| Description | 2SC5552 |
| Feature | Power Transistors 2SC5552 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / ■ Absolute Maximum Ratings TC = 25°C 18.6±0.5 (2.0) Solder Dip 5.45±0.3 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 1 700 V c e. d ty Collector-emitter vo. |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
| Part | C5552 |
|---|---|
| Description | 2SC5552 |
| Feature | Power Transistors 2SC5552 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / ■ Absolute Maximum Ratings TC = 25°C 18.6±0.5 (2.0) Solder Dip 5.45±0.3 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 1 700 V c e. d ty Collector-emitter vo. |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
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