MRF464

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF464/D NPN Silicon RF Power Transistor . . . designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. Specified 28 Volt, 30 MHz Characteristics — Output Power = 80 W (PEP) Minimum Gain = 15 dB Efficiency = 40% Intermodulation Distortion = –32 dB (Max) MATCHING PROCEDURE In the push–pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by Motorola consists of measuring hFE at the data sheet conditions and color coding the device to predetermined hFE ranges within the normal hFE limits. A color dot is added to the marking on top of the cap. Any two devices with the same color dot can be paired together to form a matched set of units. MRF464 80 W (PEP), 30 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case Stud Torque (1) Value 35 65 4.0 10 250 1.4 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C Symbol RθJC — Max 0.7 8.5 Unit °C/W In. Lb. CASE 211–11, STYLE 1 THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise note...