Document
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
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NPN Silicon RF Power Transistor
Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Efficiency = 45% • Intermodulation Distortion @ 250 W (PEP) — IMD = – 30 dB (Max) • 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
MRF448
250 W, 30 MHz RF POWER TRANSISTOR NPN SILICON
CASE 211–11, STYLE 1
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstand Current — 10 s Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC — PD Tstg Value 50 100 4.0 16 20 290 1.67 – 65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO 50 100 100 4.0 — — — — — — — — Vdc Vdc Vdc Vdc (continued)
NOTE: 1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions.
RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994
MRF448 1
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 10 Vdc) hFE 10 30 — —
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) Cob — 350 450 pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain (VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, ICQ = 250 mA) Collector Efficiency (VCC = 50 Vdc, Pout = 250 W, f = 30 MHz, ICQ = 250 mA) Intermodulation Distortion (2) (VCE = 50 Vdc, Pout = 250 W (PEP), ICQ = 250 mA, f = 30 MHz) Electrical Ruggedness (VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, VSWR 3:1 at all Phase Angles) GPE η IMD ψ No Degradation in Output Power 12 — — — 14 45 65 – 33 — — — – 30 dB % (PEP) % (CW) dB
NOTE: 2. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
R1 + BIAS C3 C4 + – L3 L2 D.U.T. RF INPUT C1 L1 C2 R2 C5 L4 CR1 C8
L5
L6 + C9 + – – RF OUTPUT C10 50 Vdc
C7 C6
C1, C2, C5, C7 — 170– 780 pF, Arco 469 C3, C8, C9 — 0.1 µF, 100 V Erie C4 — 500 µF @ 6.0 V C6 — 360 pF, 3 x 120 pF 3.0 kV in parallel C10 — 10 µF, 100 V R1 — 10 Ω, 10 Watt R2 — 10 Ω, 1.0 Watt
CR1 — 1N4997 or equivalent L1 — 3 Turns, #16 Wire, 0.4″ I.D., 0.3″ Long L2 — 0.8 µH, Ohmite Z–235 or equivalent L3 — 12 Turns, #16 Enameled Wire Closewound 0.25″ I.D. L4 — 4 Turns, 1/8″ Copper Tubing, 0.6″ I.D., 1.0″ Long L5, L6 — 2.0 µH, Fair–Rite 2643021801 Ferrite bead each or equivalent
Figure 1. 30 MHz Test Circuit Schematic
MRF448 2
MOTOROLA RF DEVICE DATA
400 Pout , OUTPUT POWER (WATTS PEP) Pout , OUTPUT POWER (WATTS CW) f = 30 MHz ICQ = 250 mA
400 f = 30, 30.001 MHz ICQ = 250 mA IMD = d3 IMD = – 30 dB
300
VCC = 50 V 40 V
300
200
200
– 35 dB
100
100
0
0
4
8 12 Pin, INPUT POWER (WATTS)
16
20
0 20
30 40 50 VCC, SUPPLY VOLTAGE (VOLTS)
60
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
25 Pout , OUTPUT POWER (WATTS CW)
400 f = 30 MHz ICQ = 250 mA VCC = 50 V
20 G PE , POWER GAIN (dB)
350
15
300 TC = 50°C 100°C
10
5 0 2 4 7 10 f, FREQUENCY (MHz)
VCC = 50 V ICQ = 250 mA Pout = 250 W
250
200
15
30
150
1
3
5
10
30 50 OUTPUT VSWR
Figure 4. Power Gain versus Frequency
Figure 5. RF SOAR (Class AB) Pout versus Output VSWR
VCC = 30 V 200 15 V f T (MHz) 150
IMD, INTERMODULATION DISTORTION (dB)
250
– 25 VCC = 50 V f = 30, 30.001 MHz d3
– 30
– 35 d5
100
– 40
50
– 45
0
0
10 15 5 IC, COLLECTOR CURRENT (AMPS)
20
– 50 25
75
125
175
225
275
Pout, OUTPUT POWER (WATTS PEP)
Figure 6. fT versus Collector Current
Figure 7. IMD versus Pout
MOTOROLA RF DEVICE DATA
MRF448 3
20 Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) CP 16 VCC = 50 V ICQ = 250 mA Pout = 250 W PEP
5000 Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) Zin Ohms 4.50 – j1.40 3.10 – j1.80 1.70 – j1.75 0.80 – j1.25 0.60 – j0.75
4000
12 RP 8
3000
2000
4
1000
0
1.5
2
4
7 10 f, FREQUENCY (MHz)
15
20
0 30
Figure 8. Output Resistance and Capacitance versus Frequency
30 15 7.0 4.0 f = 2.0 MHz Zo = 10 Ω
VCC = 50 V ICQ = 150 mA Pout = 250 W PEP f MHz 2.0 4.0 7.0 15 30
Figure 9. Series Equivalent Impedance
MRF448 4
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
A U M
1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
Q
M
4
R
B
2
.