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MRF448 Dataheets PDF



Part Number MRF448
Manufacturers Motorola
Logo Motorola
Description RF POWER TRANSISTOR
Datasheet MRF448 DatasheetMRF448 Datasheet (PDF)

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF448/D NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Efficiency = 45% • Intermodulation Distortion @ 250 W (PEP) — IMD = – 30 dB (Max) • 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR M.

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF448/D NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Efficiency = 45% • Intermodulation Distortion @ 250 W (PEP) — IMD = – 30 dB (Max) • 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR MRF448 250 W, 30 MHz RF POWER TRANSISTOR NPN SILICON CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstand Current — 10 s Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC — PD Tstg Value 50 100 4.0 16 20 290 1.67 – 65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO 50 100 100 4.0 — — — — — — — — Vdc Vdc Vdc Vdc (continued) NOTE: 1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions. RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994 MRF448 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 10 Vdc) hFE 10 30 — — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) Cob — 350 450 pF FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, ICQ = 250 mA) Collector Efficiency (VCC = 50 Vdc, Pout = 250 W, f = 30 MHz, ICQ = 250 mA) Intermodulation Distortion (2) (VCE = 50 Vdc, Pout = 250 W (PEP), ICQ = 250 mA, f = 30 MHz) Electrical Ruggedness (VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, VSWR 3:1 at all Phase Angles) GPE η IMD ψ No Degradation in Output Power 12 — — — 14 45 65 – 33 — — — – 30 dB % (PEP) % (CW) dB NOTE: 2. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone. R1 + BIAS C3 C4 + – L3 L2 D.U.T. RF INPUT C1 L1 C2 R2 C5 L4 CR1 C8 L5 L6 + C9 + – – RF OUTPUT C10 50 Vdc C7 C6 C1, C2, C5, C7 — 170– 780 pF, Arco 469 C3, C8, C9 — 0.1 µF, 100 V Erie C4 — 500 µF @ 6.0 V C6 — 360 pF, 3 x 120 pF 3.0 kV in parallel C10 — 10 µF, 100 V R1 — 10 Ω, 10 Watt R2 — 10 Ω, 1.0 Watt CR1 — 1N4997 or equivalent L1 — 3 Turns, #16 Wire, 0.4″ I.D., 0.3″ Long L2 — 0.8 µH, Ohmite Z–235 or equivalent L3 — 12 Turns, #16 Enameled Wire Closewound 0.25″ I.D. L4 — 4 Turns, 1/8″ Copper Tubing, 0.6″ I.D., 1.0″ Long L5, L6 — 2.0 µH, Fair–Rite 2643021801 Ferrite bead each or equivalent Figure 1. 30 MHz Test Circuit Schematic MRF448 2 MOTOROLA RF DEVICE DATA 400 Pout , OUTPUT POWER (WATTS PEP) Pout , OUTPUT POWER (WATTS CW) f = 30 MHz ICQ = 250 mA 400 f = 30, 30.001 MHz ICQ = 250 mA IMD = d3 IMD = – 30 dB 300 VCC = 50 V 40 V 300 200 200 – 35 dB 100 100 0 0 4 8 12 Pin, INPUT POWER (WATTS) 16 20 0 20 30 40 50 VCC, SUPPLY VOLTAGE (VOLTS) 60 Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage 25 Pout , OUTPUT POWER (WATTS CW) 400 f = 30 MHz ICQ = 250 mA VCC = 50 V 20 G PE , POWER GAIN (dB) 350 15 300 TC = 50°C 100°C 10 5 0 2 4 7 10 f, FREQUENCY (MHz) VCC = 50 V ICQ = 250 mA Pout = 250 W 250 200 15 30 150 1 3 5 10 30 50 OUTPUT VSWR Figure 4. Power Gain versus Frequency Figure 5. RF SOAR (Class AB) Pout versus Output VSWR VCC = 30 V 200 15 V f T (MHz) 150 IMD, INTERMODULATION DISTORTION (dB) 250 – 25 VCC = 50 V f = 30, 30.001 MHz d3 – 30 – 35 d5 100 – 40 50 – 45 0 0 10 15 5 IC, COLLECTOR CURRENT (AMPS) 20 – 50 25 75 125 175 225 275 Pout, OUTPUT POWER (WATTS PEP) Figure 6. fT versus Collector Current Figure 7. IMD versus Pout MOTOROLA RF DEVICE DATA MRF448 3 20 Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) CP 16 VCC = 50 V ICQ = 250 mA Pout = 250 W PEP 5000 Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) Zin Ohms 4.50 – j1.40 3.10 – j1.80 1.70 – j1.75 0.80 – j1.25 0.60 – j0.75 4000 12 RP 8 3000 2000 4 1000 0 1.5 2 4 7 10 f, FREQUENCY (MHz) 15 20 0 30 Figure 8. Output Resistance and Capacitance versus Frequency 30 15 7.0 4.0 f = 2.0 MHz Zo = 10 Ω VCC = 50 V ICQ = 150 mA Pout = 250 W PEP f MHz 2.0 4.0 7.0 15 30 Figure 9. Series Equivalent Impedance MRF448 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS A U M 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q M 4 R B 2 .


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