MRF4427

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Low Cost SO-8 Plastic Surface Mount Package. S-Parameter Characterization Tape and Reel Packaging Options Available Low Voltage Version of MRF3866 Maximum Available Gain – 20dB(typ) @ 200MHz SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 2.0 400 Unit Vdc Vdc Vdc mA Thermal Data P T stg R D Total Device Dissipation @ TC = 25ºC Derate above 25ºC Storage Temperature 1.5 12.5 -65 to + 150 Watts mW/ ºC ºC ºC/W θJA Thermal Resistance, Junction to Ambient 125 MSC1313.PDF 10-25-99 MRF4427, R1, R2 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICEO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0 Vdc) 20 40 2.0 Value Typ. Max. .02 Unit Vdc Vdc Vdc mA (on) HFE DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 360 mAdc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC...