SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF421/D
The RF Line
NPN Silicon RF Power Transistor
Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40% Intermodulation Distortion @ 100 W (PEP) — IMD = ...