Document
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF4427/D
NPN Silicon RF Low Power Transistor
Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount components. Suitable for use as output driver or pre–driver stages in VHF and UHF equipment. • Low Cost SORF Plastic Surface Mount Package • Guaranteed RF Specification — |S21|2 • S–Parameter Characterization • Low Voltage Version of MRF3866 • Tape and Reel Packaging Available. R2 suffix = 2,500 units per reel
MRF4427R2
1.0 W, 175 MHz HIGH–FREQUENCY TRANSISTOR NPN SILICON
CASE 751–05, STYLE 1 SORF (SO–8)
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 75°C Derate above 75°C Operating Junction and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Symbol RθJC Value 20 40 2.0 400 1.67 22.2 – 65 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Max 45 Unit °C/W
DEVICE MARKING
MRF4427 = 4427
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 5.0 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Emitter–Base Breakdown Voltage (IE = 100 µAdc) Collector Cutoff Current (VCE = 12 Vdc, IB = 0) V(BR)CEO V(BR)CER V(BR)EBO ICEO 20 40 2.0 — — — — — — — — 20 Vdc Vdc Vdc µAdc (continued)
NOTE: 1.Case temperature measured on collector lead immediately adjacent to body of package.
REV 8
RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997
MRF4427R2 1
ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 360 mAdc, VCE = 5.0 Vdc) Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mAdc) hFE 10 5.0 VCE(sat) — 50 — 60 200 — — mVdc —
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz) Output Capacitance (VCB = 12 Vdc, IE = 0, f = 1.0 MHz) fT Cob — — 1600 — — 3.0 MHz pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain (Pin = 15 mW, VCC = 12 Vdc, f = 175 MHz) Collector Efficiency (Figure 1) (Pout = 1.0 W, VCC = 12 Vdc, f = 175 MHz) Insertion Gain (VCE = 12 Vdc, IC = 50 mA, f = 200 MHz) Gpe η |S21|2 — — 18 60 — — dB %
14
16.4
—
dB
C3 D.U.T. C1 C2 RFC2 RFC1 L1 C4
L2 C5
C8 C6 C7
C9
RFC3 C10 C11 C12 C13 C14
RFC4
C15
C16 + D1 R1 R2 VCC
C1, C2 — 5.5 – 18 pF Erie ceramic trimmer C3 — 1000 pF ATC 100 mil chip cap. C4 — 9.0 – 35 pF Erie ceramic trimmer C5 — Arco 405 mica trimmer C6, C8, C10, C14 — 0.1 µF Erie blue cap. C7, C9 — 470 pF ATC 100 mil chip cap. C11, C13, C15 — 1.0 µF Erie blue cap, non–polar C12 — 1000 pF feedthru C16 — 10 µF, 25 V tantalum D1 — 1N4148 or 1N914 L1 — 6T #20 AWG on #2 drill bit L2 — 4T #20 AWG on #4 drill bit R1 — 4.7 kΩ 1/8 watt carbon R2 — 100 Ω 1/8 watt carbon RFC1 – 4 — 10 µH molded choke
Figure 1. 175 MHz RF Amplifier Circuit for Functional Tests
MRF4427R2 2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
10 9 Cob, OUTPUT CAPACITANCE (pF) 8 7 6 5 4 3 2 1 0 3 6 9 12 15 18 21 24 27 30 f = 1 MHz fτ , GAIN BANDWIDTH PRODUCT (MHz) 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 20 40 60 80 10 120 140 IC, COLLECTOR 0 CURRENT (mA) 160 180 200 VCC = 12 Vdc f = 200 MHz
VCB, COLLECTOR–BASE VOLTAGE (V)
Figure 2. Collector–Base Capacitance versus Voltage
Figure 3. Gain Bandwidth Product versus Collector Current
1200 1100 Pout , OUTPUT POWER (mW) 1000 900 800 700 600 500 400 300 4 5 6 7 8 9 10 11 12 13 14 f = 136 MHz 175 MHz Pin = 15 mW Pout , OUTPUT POWER (mW)
1200 1100 1000 900 800 700 600 500 400 300 110 120 130 140 150 160 170 180 190 200 210 VCC = 5 V Pin = 30 mW VCC = 7.5 V Pin = 30 mW VCC = 12.5 V Pin = 15 mW
VCC, COLLECTOR SUPPLY VOLTAGE (V)
f, FREQUENCY (MHz)
Figure 4. Output Power versus Voltage
Figure 5. Output Power versus Frequency
MOTOROLA RF DEVICE DATA
MRF4427R2 3
VCE (Volts) 5.0
IC (mA) 5.0
f (MHz) 50 100 200 500 750 1000 50 100 200 500 750 1000 50 100 200 500 750 1000 50 100 200 500 750 1000 50 100 200 500 750 1000 50 100 200 500 750 1000
S11 |S11| 0.82 0.83 0.81 0.80 0.79 0.76 0.77 0.79 0.79 0.78 0.77 0.74 0.77 0.79 0.79 0.78 0.77 0.74 0.83 0.82 0.81 0.79 0.78 0.75 0.73 0.76 0.77 0.76 0.75 0.72 0.73 0.75 0.76 0.75 0.74 0.71 ∠φ – 104 – 141 – 165 169 156 144 – 151 – 168 – 180 163 152 141 – 163 – 174 177 162 151 140 – 97 – 135 – 162 171 157 145 – 143 – 164 – 177 165 154 143 – 156 – 171 59 164 153 142 |S21| 10.3 6.1 3.2 1.3 0.8 0.6 19 9.9 5.0 2.0 1.3 0.9 21.1 10.7 5.4 2.2 1.4 1.1 11 6.8 3.6 1.4 0.9 0.7 22.1 11.7 6.0 2.4 1.6 1.1 25.5 13.1 6.6 2.6 1.7 1.2
S21 ∠φ 125 103 85 57 42 30 107 94 82 61 48 36 103 92 82 62 50 38 129 107 88 60 44 32 111 96 84 63 49 38 106 94 83 64 51 38 |S12| 0.05 0.06 0.07 0.07 0.08 0.