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MRF492 Dataheets PDF



Part Number MRF492
Manufacturers Motorola
Logo Motorola
Description RF POWER TRANSISTOR
Datasheet MRF492 DatasheetMRF492 Datasheet (PDF)

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF492/D NPN Silicon RF Power Transistor Designed for 12.5 volt low band VHF large–signal power amplifier applications in commercial and industrial FM equipment. • Specified 12.5 V, 50 MHz Characteristics — Output Power = 70 W Minimum Gain = 11 dB Efficiency = 50% • Load Mismatch Capability at High Line and RF Overdrive MRF492 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage.

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF492/D NPN Silicon RF Power Transistor Designed for 12.5 volt low band VHF large–signal power amplifier applications in commercial and industrial FM equipment. • Specified 12.5 V, 50 MHz Characteristics — Output Power = 70 W Minimum Gain = 11 dB Efficiency = 50% • Load Mismatch Capability at High Line and RF Overdrive MRF492 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 18 36 4.0 20 250 1.43 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C CASE 211–11, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 0.7 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 13.6 Vdc, VBE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICES 18 36 4.0 — — — — — — — — 20 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 10 — 150 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) Cob — 275 450 pF FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 70 W, f = 50 MHz) Collector Efficiency (VCC = 12.5 Vdc, Pout = 70 W, f = 50 MHz) GPE η 11 50 13 — — — dB % NOTES: 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994 MRF492 1 +12.5 Vdc + C6 RFC2 L2 C1 L1 DUT RFC1 C2 C5 BEAD C3 C4 L3 C8 – C7 RF OUTPUT RF INPUT C1, C8 — 9.0 – 180 pF, Arco 463 C2, C3, C4 — 80 – 480 pF, Arco 466 C5 — 1000 pF, 350 V, Unelco C6 — 10 µF, 25 Vdc C7 — 0.01 µF, Ceramic RFC1 — 10 µH Molded Choke RFC2 — 12 Turns, #16 AWG, Enameled Wire Closewound RFC2 — on a 2.0 W Carbon Resistor L1 — 2 Turns, #18 AWG Enameled Wire, 0.4″ ID, 0.15″ Long L2 — Loop, #12 AWG Wire, 0.6″ High, 0.4″ Wide L3 — 2 Turns, #12 AWG Wire, ID 0.4″, 0.25″ Long Bead — Ferrite Bead Ferroxcube #56–590–65/3B Figure 1. 50 MHz Test Circuit 100 Pout , OUTPUT POWER (WATTS) VCC = 12.5 V f = 50 MHz G PE , POWER GAIN (dB) 20 VCC = 12.5 V Pout = 70 W 80 18 60 16 40 14 20 12 0 0 1 2 3 4 5 6 7 8 9 10 10 20 25 30 35 40 45 50 Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz) Figure 2. Output Power versus Input Power Figure 3. Power Gain versus Frequency MRF492 2 MOTOROLA RF DEVICE DATA 140 f = 50 MHz Pout , OUTPUT POWER (WATTS) 120 100 80 60 40 20 0 7 8 9 10 11 12 13 14 15 16 17 Pin = 8 W 4W 2W VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage 1.0 2.0 – j1.0 – j2.0 0 0 50 30 1.0 VCC = 12.5 V, Pout = 70 W f MHz Zin Ohms 1.12 – j1.28 0.93 – j1.24 0.7 – j1.17 ZOL* Ohms 0.85 – j1.46 0.76 – j1.3 0.58 – j1.0 3.0 f = 25 MHz ZOL* 2.0 50 Zin 30 f = 25 MHz Zo = 10 Ω 2.0 1.0 25 30 50 Zo = 10 Ω 3.0 4.0 5.0 ZOL* = Conjugate of the optimum load ZOL* = impedance into which the device ZOL* = output operates at a given output ZOL* = power, voltage and frequency. Figure 5. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA MRF492 3 PACKAGE DIMENSIONS A U M 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q M 4 R B 2 3 D K J H C E SEATING PLANE DIM A B C D E H J K M Q R U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 ––– 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 ––– 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 EMITTER BASE EMITTER COLLECTOR CASE 211–11 ISSUE N Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized.


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