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MRF479 Dataheets PDF



Part Number MRF479
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Datasheet MRF479 DatasheetMRF479 Datasheet (PDF)

MRF479 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-220AB (COMMON EMITTER) DESCRIPTION: The ASI MRF479 is Designed for 12.5 V FM Large-Signal Amplifier Applications to 50 MHz. MAXIMUM RATINGS IC VCE VCB PDISS TSTG θJC O 2.0 A (CONT) 18 V 36 V 30 W @ TC = 25 C -65 C to +150 C 5.85 C/W O O O 1 = BASE 3 = COLLECTOR 2 = EMITTER TAB = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICES hFE Cob GPE η d3 IC = 20 mA IC = 20 mA IE = 5.0 mA TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXI.

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MRF479 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-220AB (COMMON EMITTER) DESCRIPTION: The ASI MRF479 is Designed for 12.5 V FM Large-Signal Amplifier Applications to 50 MHz. MAXIMUM RATINGS IC VCE VCB PDISS TSTG θJC O 2.0 A (CONT) 18 V 36 V 30 W @ TC = 25 C -65 C to +150 C 5.85 C/W O O O 1 = BASE 3 = COLLECTOR 2 = EMITTER TAB = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICES hFE Cob GPE η d3 IC = 20 mA IC = 20 mA IE = 5.0 mA TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 18 36 4.0 5.0 UNITS V V V mA --- VCES = 15 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V f1 = 30 MHz IC = 500 mA f = 1.0 MHz ICQ = 20 mA Pout = 15 W (PEP) f2 = 30.001 MHz 12 40 30 50 120 14 155 pF dB % dB -30 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 .


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