MRF3104

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF3104/D The RF Line Microwave Linear Power Transistors Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics: MRF3104 Output Power Power Gain 0.5 W 10.5 dB MRF3105 0.8 W 9 dB MRF3106 1.6 W 8 dB MRF3104 MRF3105 MRF3106 8.0–12 dB GAIN 1.55–1.65 GHz MICROWAVE LINEAR POWER TRANSISTORS Low Parasitic Microwave Stripline Package Gold Metalization for Improved Reliability Diffused Ballast Resistors MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current MRF3104, MRF3105 MRF3106 Symbol VCEO VCES VEBO IC Tj Tstg Value 22 50 3.5 0.4 0.8 200 –65 to +125 Unit Vdc Vdc Vdc Adc °C °C CASE 305A–01, STYLE 1 (.204″ PILL) Operating Junction Temperature Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case, DC MRF3104 MRF3105 MRF3106 Symbol RθJC (DC) Max 40 35 22 Unit °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) Collector–Base Breakdown Voltage (IC = 1 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = 0.25 mA, IC = 0) Collector Cutoff Current (VCB = 28 V, IE = 0) MRF3104, MRF3105 MRF3106 BVCEO BVCES BVCBO BVEBO ICBO 22 50 45 3.5 — — — — — — — — — — — — 0.25 0.5 Vdc Vdc Vdc Vdc mAdc O...