MRF317

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF317/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB Built–In Matching Network for Broadband Operation 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization System for High Reliability High Output Saturation Power — Ideally Suited for 30 W Carrier/120 W Peak AM Amplifier Service Guaranteed Performance in Broadband Test Fixture MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak (10 seconds) Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 35 65 4.0 12 18 270 1.54 –65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C MRF317 100 W, 30–200 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316–01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.65 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter–Bas...