MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF317/D
NPN Silicon RF Power Transistor
. ....
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF317/D
NPN Silicon RF Power
Transistor
. . . designed primarily for wideband large–signal output amplifier stages in 30 – 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB Built–In Matching Network for Broadband Operation 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization System for High Reliability High Output Saturation Power — Ideally Suited for 30 W Carrier/120 W Peak AM Amplifier Service Guaranteed Performance in Broadband Test Fixture MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak (10 seconds) Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 35 65 4.0 12 18 270 1.54 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C
MRF317
100 W, 30 – 200 MHz CONTROLLED Q BROADBAND RF POWER
TRANSISTOR NPN SILICON
CASE 316–01, STYLE 1
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.65 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0...