MRF314

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF314/D The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR Gold Metallization System for High Reliability Applications MRF314 30 W, 30–200 MHz RF POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 35 65 4.0 3.4 82 0.47 –65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C CASE 211–07, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.13 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 30 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 30 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 30 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 3.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 35 65 65 4.0 — — — — — — — — — — 3.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 1....