SPW11N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Peri...
SPW11N60S5 Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance
VDS RDS(on) ID
600 0.38 11
P-TO247
V Ω A
Type SPW11N60S5
Package P-TO247
Ordering Code Q67040-S4239
Marking 11N60S5
Maximum Ratings Parameter Symbol ID Value Unit
Continuous drain current
TC = 25 °C TC = 100 °C
A 11 7
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
I D = 5.5 A, VDD = 50 V
I D puls EAS
22 340 0.6 11 ±20
±30
mJ
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
I D = 11 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz)
Power dissipation, T C = 25°C
A V W °C
VGS Ptot T j , T stg
125 -55... +150
Operating and storage temperature
Rev. 2.1
Page 1
2004-03-30
SPW11N60S5
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, ID = 11 A, Tj = 125 °C
Symbol dv/dt
Value 20
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Symbol min. RthJC RthJA Values typ. max. 1 62 K/W Unit
Soldering temperature, 1.6 mm (0.063 in.) from case for 10s
Tsold
-
-
260
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalan...