SPW12N50C3

Final data SPW12N50C3 VDS @ Tjmax RDS(on) ID 560 0.38 11.6 P-TO247 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance V Ω A Type SPW12N50C3 Package P-TO247 Ordering Code Q67040-S4580 Marking 12N50C3 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 °C TC = 100 °C A 11.6 7 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 5.5 A, VDD = 50 V I D puls EAS 34.8 340 0.6 11.6 6 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 11.6 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Reverse diode dv/dt dv/dt IS=11.6A, VDS=480V, T j=125°C A V/ns V W °C 2003-06-30 Gate source voltage VGS VGS Ptot T j , T stg Page 1 Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature 125 -55... +150 Final data SPW12N50C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 400 V, ID = 11.6 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditio...