UPA2716GR

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2716GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The µ PA2716GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain FEATURES Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = –10 V, ID = –7.0 A) RDS(on)2 = 11.3 mΩ MAX. (VGS = –4.5 V, ID = –7.0 A) Low Ciss: Ciss = 3000 pF TYP. Built-in gate protection diode Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10 –0.05 6.0 ±0.3 4.4 0.8 1.8 MAX. 1.44 0.05 MIN. ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.15 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M µ PA2716GR ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note3 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg –30 m20 m14 m140 2 2 150 –55 to + 150 –14 19.6 V V A A W W °C °C A mJ Gate Protection Diode Source Gate Drain EQUIVALENT CIRCUIT Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Body Diode Single Avalanche Current Single Avalanche Energy Notes 1. 2. 3. 4. Note4 Note4 IAS EAS PW ≤ 10 µs, Duty Cycle ≤ 1% Mounted on ceramic substrate of 1200 mm2 x 2.2 mm Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 se...