UPA2711GR

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2711GR SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain DESCRIPTION The µ PA2711GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES Low on-state resistance RDS(on)1 = 9 mΩ MAX. (VGS = −10 V, ID = −6.5 A) RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A) RDS(on)3 = 20 mΩ MAX. (VGS = −4.0 V, ID = −6.5 A) Low Ciss: Ciss = 2450 pF TYP. Small and surface mount package (Power SOP8) 6.0 ±0.3 4.4 +0.10 –0.05 1 4 5.37 MAX. 1.44 0.8 1.8 MAX. 0.15 0.05 MIN. 0.5 ±0.2 0.10 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M µ PA2711GR ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note3 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg –30 m20 m13 m52 2 2 150 –55 to + 150 −13 16.9 V V A A W W °C °C A mJ Source Gate Body Diode EQUIVALENT CIRCUIT Drain Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Notes 1. 2. 3. 4. Remark Note4 Note4 IAS EAS PW ≤ 10 µs, Duty Cycle ≤ 1% 2 Mounted on ceramic substrate of 1200 mm x 2.2 mm Mounted on a glass epoxy board (1 inch x 1 inch ...