UPA2708GR

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2708GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µ PA2708GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 Power SOP8 Power SOP8 Power SOP8 µ PA2708GR-E1 µ PA2708GR-E2 Note Note FEATURES Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) Low Ciss: Ciss = 4700 pF TYP. (VDS = 10 V, VGS = 0 V) Small and surface mount package (Power SOP8) µ PA2708GR-E1-A µ PA2708GR-E2-A Note Pb-free (This product does not contain Pb in external electrode and other parts.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note2 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 30 ±20 ±17 ±68 1.1 2.5 150 −55 to +150 17 28.9 V V A A W W °C °C A mJ Total Power Dissipation Channel Temperature Storage Temperature Total Power Dissipation (PW =10 sec) Single Avalanche Current Single Avalanche Energy Note3 Note3 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Ambient Note Note Rth(ch-A) Rth(ch-L) 114 30 °C/W °C/W Channel to Drain Lead Not...