UPA2706TP

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2706TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µ PA2706TP, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer. ORDERING INFORMATION PART NUMBER PACKAGE Power HSOP8 µ PA2706TP FEATURES Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A) Low Ciss: Ciss = 660 pF TYP. (VDS = 10 V, VGS = 0 V) Small and surface mount package (Power HSOP8) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, all terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (DC) Note1 Note2 VDSS VGSS ID(DC)1 ID(DC)2 ID(pulse) PT1 PT2 Tch Tstg 30 ±20 ±20 ±11 ±44 15 3 150 −55 to +150 11 12.1 V V A A A W W °C °C A mJ Drain Current (pulse) Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 Note1 IAS EAS Notes 1. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW = 10 sec 2. PW ≤ 10 µs, Duty Cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of stat...