UPA2701TP

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2701TP SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The µPA2701TP, which has a heat spreader, is N-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. 1.49 ±0.21 1.44 TYP. 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain 1 5.2 +0.17 –0.2 4 6.0 ±0.3 0.8 ±0.2 +0.10 –0.05 FEATURES Low on-state resistance RDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 11.6 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) Low Ciss: Ciss = 1200 pF TYP. (VDS = 10 V, VGS = 0 V) Small and surface mount package (Power HSOP8) 4.4 ±0.15 S 0.05 ±0.05 0.15 1.27 TYP. 0.40 1 +0.10 –0.05 0.10 S 0.12 M 1.1 ±0.2 4 2.0 ±0.2 2.9 MAX. ORDERING INFORMATION PART NUMBER PACKAGE Power HSOP8 8 9 4.1 MAX. µPA2701TP 5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note2 Note1 VDSS VGSS ID(DC)1 ID(DC)2 ID(pulse) PT1 Note1 30 ±20 ±35 ±16 ±80 28 3 150 –55 to +150 18 32.4 V V A A A W W °C °C A mJ Gate Protection Diode Source Gate Drain EQUIVALENT CIRCUIT Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 Body Diode PT2 Tch Tstg IAS EAS N...