MOS FIELD EFFECT TRANSISTOR
N-CHANNEL POWER MOS FET
The µPA2700GR is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
• Low on-state resistance
RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A)
RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A)
• Low Ciss: Ciss = 2600 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit: mm)
1, 2, 3 ; Source
4 ; Gate
5, 6, 7, 8 ; Drain
1.27 0.78 MAX.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
Tch 150 °C
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg –55 to + 150 °C
EAS 28.9 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15672EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.