UPA2730TP

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2730TP SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The µPA2730TP which has a heat spreader is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. 1.49 ±0.21 1.44 TYP. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain FEATURES Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = –10 V, ID = –7.5 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = –4.5 V, ID = –7.5 A) RDS(on)3 = 12.0 mΩ MAX. (VGS = –4.0 V, ID = –7.5 A) Low Ciss: Ciss = 4670 pF TYP. Small and surface mount package (Power HSOP8) 1 5.2 +0.17 –0.2 4 0.8 ±0.2 S +0.10 –0.05 6.0 ±0.3 4.4 ±0.15 0.05 ±0.05 0.15 1.27 TYP. 0.40 1 +0.10 –0.05 0.10 S 0.12 M 1.1 ±0.2 4 2.9 MAX. ORDERING INFORMATION PART NUMBER PACKAGE Power HSOP8 8 2.0 ±0.2 9 4.1 MAX. µPA2730TP 5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Note1 Drain Current (DC) Note2 Drain Current (pulse) Total Power Dissipation (TC = 25°C) Note1 Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Note3 Single Avalanche Current Note3 Single Avalanche Energy VDSS VGSS ID(DC)1 ID(DC)2 ID(pulse) PT1 PT2 Tch Tstg IAS EAS −30 m20 m42 m20 m120 40 3 150 −55 to + 150 −15 22.5 V V A A A W W °C °C A mJ EQUIVALENT CIRCUIT Drain Gate Body Di...