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74HC2G02

NXP

Dual 2-input NOR gate

INTEGRATED CIRCUITS DATA SHEET 74HC2G02; 74HCT2G02 Dual 2-input NOR gate Product specification Supersedes data of 2003 ...


NXP

74HC2G02

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Description
INTEGRATED CIRCUITS DATA SHEET 74HC2G02; 74HCT2G02 Dual 2-input NOR gate Product specification Supersedes data of 2003 Feb 03 2003 May 14 Philips Semiconductors Product specification Dual 2-input NOR gate FEATURES Wide supply voltage range from 2.0 to 6.0 V Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays Very small 8 pins package Output capability is standard ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. Specified from −40 to +85 °C and −40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. DESCRIPTION 74HC2G02; 74HCT2G02 The 74HC2G/HCT2G02 is a high-speed Si-gate CMOS device. The 74HC2G/HCT2G02 provides the 2-input NOR function. TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For 74HC2G02 the condition is VI = GND to VCC. For 74HCT2G02 the condition is VI = GND to VCC − 1.5 V. PARAMETER propagation delay nA, nB to nY input capacitance power dissipation capacitance per gate notes 1 and 2 CONDITIONS HC2G02 CL = 15 pF; VCC = 5 V 9 1.5 10 HCT2G02 12 1.5 10 ns pF pF UNIT 2003 May 14 2 Philips Semiconductors Product specification ...




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