2SC6033

2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications ＴＳＭ 0 . 9 5 0 .9 5 2. 9± 0 . 2 1. 9± 0. 2 High DC current gain: hFE = 250 to 400 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High-speed switching: tf = 38 ns (typ.) 1 2 3 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range t = 10s DC DC Pulse VCBO VCEX VCEO VEBO IC ICP IB Pc (Note 1) Tj Tstg 100 80 50 6 2.5 5 0.3 1.00 0.625 150 −55 to 150 V V V V A A W °C °C 2 1. Base 2. Emitter 3. Collector JEDEC JEITA TOSHIBA － － － 2-3S1A Weight: 0.01g (Typ.) Note 1: Mounted on an FR4 board (glass epoxy, 1.6mm thick, Cu area: 64.5 mm ) 1 0 ～ 0. 1 Characteristics Symbol Rating Unit 0. 7± 0 .0 5 Maximum Ratings (Ta = 25°C) 2004-07-01 0. 16± 0 . 0 5 0 .1 5 0 . 4± 0. 1 +0.2 2.8-0.3 +0.2 1.6-0.1 2SC6033 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 100 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE ...