2SC6023

Ordering number : ENN8143 2SC6023 NPN Epitaxial Planar Silicon Transistor 2SC6023 Features UHF to C Band Low-Noise Amplifier and OSC Applications NF=1.2dB typ (f=2GHz). fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). S21e2=14dB typ (f=2GHz). Low-noise use : High cut-off frequency : : Low operating voltage. High gain : Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 9 3.5 2 35 120 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cre 2 S21e 1 2 S21e  2 Conditions VCB=5V, IE=0 VEB=1V, IC=0 VCE=3V, IC=15mA VCE=1V, IC=5mA VCE=3V, IC=15mA VCB=1V, f=1MHz VCE=1V, IC=5mA, f=2GHz VCE=3V, IC=15mA, f=2GHz VCE=1V, IC=5mA, f=2GHz Ratings min typ max 1.0 1 80 14.5 18 9.5 22 0.18 11 14 1.2 160 Unit µA µA GHz GHz pF dB dB dB NF Marking : NF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to res...