2SC5993

Power Transistors 2SC5993 Silicon NPN epitaxial planar type For power amplification For TV VM circuit 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 φ 3.2±0.1 15.0±0.5 ■ Features Satisfactory linearity of forward current transfer ratio hFE High transition frequency (fT) Full-pack package which can be installed to the heat sink with one screw. 1.4±0.2 1.6±0.2 2.6±0.1 / ■ Absolute Maximum Ratings TC = 25°C 13.7±0.2 4.2±0.2 Solder Dip 0.8±0.1 0.55±0.15 e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 180 V n d ge. ed Collector-emitter voltage (Base open) VCEO 180 V sta tinu Emitter-base voltage (Collector open) VEBO 6 V a e cycle iscon Collector current IC 1.5 A life d, d Peak collector current ICP 3 A n u duct type Collector power dissipation PC 20 W te tin Pro ued Ta=25°C 2.0 four ntin Junction temperature Tj 150 °C wing disco Storage temperature Tstg −55 to +150 °C 2.54±0.30 5.08±0.50 123 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Internal Connection C B E ain onincludestyfpoell,oplaned ■ Electrical Characteristics TC = 25°C ± 3°C c tinued ance Parameter Symbol Conditions M is con inten Collector-emitter voltage (Base open) /Dis ma Collector-base cutoff current (Emitter open) D ance type, Emitter-base cutoff current (Collector open) ten ce Forward current transfer ratio * Main tenan Collector-emitter saturation voltage ain Transition frequency d m Collector output capacitance...