The POWER IGBT
TYPICAL PERFORMANCE CURVES
APT15GP90B
APT15GP90B
900V
POWER MOS 7 IGBT
®
TO-247
The POWER MOS 7 IGBT is a new gener...
Description
TYPICAL PERFORMANCE CURVES
APT15GP90B
APT15GP90B
900V
POWER MOS 7 IGBT
®
TO-247
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
®
G
C
Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
100 kHz operation @ 600V, 9A 50 kHz operation @ 600V, 17A SSOA Rated
E
C G E
All Ratings: TC = 25°C unless otherwise specified.
APT15GP90B UNIT
900 ±20 ±30 43 21 60 60A @ 900V 291 -55 to 150 300
Watts °C Amps Volts
Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
@ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT
900 3 4.5 3.2 2.7 250
2
6 3.9
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) Collect...
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