P-Channel Silicon MOSFET
Ordering number : ENN7784
FW156
P-Channel Silicon MOSFET
FW156
Features
• • • •
General-Purpose Switching Device App...
Description
Ordering number : ENN7784
FW156
P-Channel Silicon MOSFET
FW156
Features
General-Purpose Switching Device Applications
For DC / DC converters, Motor drives, Inverters. Low ON-resistance. Ultrahigh-speed switching. 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) 1unit, PW≤10s Mounted on a ceramic board (1200mm !0.8mm),
2
Conditions
Ratings --60 ±20 --3.5 --14 2.0 2.3 150 --55 to +150
Unit V V A A W W °C °C
PW≤10s
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1mA, VGS=0 VDS=-60V, VGS=0 VGS= ±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--2A ID=--2A, VGS=-10V ID=--2A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz Ratings min --60 --1 ±10 --1.2 3 4.6 110 150 990 110 76 145 210 --2.6 typ max Unit V
µA µA
V S mΩ mΩ pF pF pF
Marking : W156
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