FXT453

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt FXT453 B C E REFER TO ZTX453 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO I CM IC Ptot Tj:Tstg 120 100 5 2 1 1 E-Line TO92 Compatible VALUE UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO MIN. 120 100 5 0.1 0.1 0.7 1.3 40 10 150 15 3-33 200 MHz pF TYP. MAX. UNIT V V V µA µA CONDITIONS. IC=100µ A, IE=0 IC=10mA, IB=0* IE=100µ A, IC=0 VCB=100V, IE=0 VEB=4V, IC=0 IC=150mA, IB=15mA* IC=150mA, IB=15mA* IC=150mA, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo ...