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IGD01N120H2 Dataheets PDF



Part Number IGD01N120H2
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet IGD01N120H2 DatasheetIGD01N120H2 Datasheet (PDF)

IGP01N120H2, IGD01N120H2 HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A nd IGB01N120H2 C G E • P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) P-TO-252-3-1 (D-PAK) (TO-252AA) .

  IGD01N120H2   IGD01N120H2



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IGP01N120H2, IGD01N120H2 HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A nd IGB01N120H2 C G E • P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) P-TO-252-3-1 (D-PAK) (TO-252AA) • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGP01N120H2 IGB01N120H2 IGD01N120H2 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25°C, f = 140kHz TC = 100°C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 225 (for SMD) °C VGE Ptot ±20 28 V W ICpuls Symbol VCE IC 3.2 1.3 3.5 3.5 Value 1200 Unit V A VCE 1200V 1200V 1200V IC 1A 1A 1A Eoff 0.09mJ 0.09mJ 0.09mJ Tj 150°C 150°C 150°C Package P-TO-220-3-1 P-TO-263 (D PAK) P-TO-252 (DPAK) 2 Ordering Code Q67040-S4593 Q67040-S4592 Q67040-S4591 Power Semiconductors 1 Rev. 2, Mar-04 IGP01N120H2, IGD01N120H2 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB1) RthJA P-TO-263 (D2PAK) RthJA P-TO-220-3-1 RthJC Symbol Conditions IGB01N120H2 Max. Value 4.5 62 40 Unit K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 30 0 µ A VCE(sat) V G E = 15V, I C = 1A T j = 25 ° C T j = 15 0 ° C V G E = 10V, I C = 1A , T j = 25 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 30 µ A , V C E = V G E V C E = 1200V, V G E = 0V T j = 25 ° C T j = 15 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f = 1 M Hz V C C = 9 60V, I C = 1A V G E = 1 5V P -T O - 2 20- 3- 1 P-TO-247-3-1 7 13 nH 91.6 9.8 3.4 8.6 nC pF IGES gfs V C E = 0V , V G E = 2 0V V C E = 20V, I C = 1A 0.75 20 80 40 nA S 2.1 2.2 2.5 2.4 3 2.8 3.9 µA 1200 V Symbol Conditions Value min. Typ. max. Unit 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2 Rev. 2, Mar-04 Power Semiconductors IGP01N120H2, IGD01N120H2 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time .


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