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IGP03N120H2 Dataheets PDF



Part Number IGP03N120H2
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet IGP03N120H2 DatasheetIGP03N120H2 Datasheet (PDF)

IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A • Qualified according to JEDEC2 for target applications PG-TO220-3-1 • Pb-free lead plating; RoHS complian.

  IGP03N120H2   IGP03N120H2


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IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A • Qualified according to JEDEC2 for target applications PG-TO220-3-1 • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-247-3 Type IGW03N120H2 IGP03N120H2 VCE IC Eoff Tj 1200V 3A 0.15mJ 150°C 1200V 3A 0.15mJ 150°C Marking G03H1202 G03H1202 Package PG-TO-247-3 PG-TO-220-3-1 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25°C, f = 140kHz TC = 100°C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°.


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