IRFP240

IRFP240 Data Sheet July 1999 File Number 2087.4 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17422. Features 20A, 200V rDS(ON) = 0.180Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFP240 PACKAGE TO-247 BRAND IRFP240 Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (FLANGE) 4-317 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFP240 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFP240 200 200 20 12 80 ±20 150 1.2 510 -55 to 150 300 260 UNITS V V A A A V W ...