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Power MOSFET. IRFP240 Datasheet

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Power MOSFET. IRFP240 Datasheet
















IRFP240 MOSFET. Datasheet pdf. Equivalent













Part

IRFP240

Description

N-Channel Power MOSFET



Feature


IRFP240 Data Sheet July 1999 File Number 2087.4 20A, 200V, 0.180 Ohm, N-Channe l Power MOSFET This N-Channel enhanceme nt mode silicon gate power field effec t transistor is an advanced power MOSFE T designed, tested, and guaranteed to w ithstand a specified level of energy i n the breakdown avalanche mode of opera tion. All of these power MOSFETs are de signed for application.
Manufacture

Intersil Corporation

Datasheet
Download IRFP240 Datasheet


Intersil Corporation IRFP240

IRFP240; s such as switching regulators, switchin g convertors, motor drivers, relay driv ers, and drivers for high power bipolar switching transistors requiring high s peed and low gate drive power. These ty pes can be operated directly from integ rated circuits. Formerly developmental type TA17422. Features • 20A, 200V rDS(ON) = 0.180Ω • Single Pulse Avalanche Energy Rated • S.


Intersil Corporation IRFP240

OA is Power Dissipation Limited • Nano second Switching Speeds • Linear Tran sfer Characteristics • High Input Imp edance • Related Literature - TB334 Guidelines for Soldering Surface Moun t Components to PC Boards” Ordering Information PART NUMBER IRFP240 PACKAGE TO-247 BRAND IRFP240 Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC .


Intersil Corporation IRFP240

STYLE TO-247 SOURCE DRAIN GATE DRAIN (F LANGE) 4-317 CAUTION: These devices a re sensitive to electrostatic discharge ; follow proper ESD Handling Procedures . http://www.intersil.com or 407-727-92 07 | Copyright © Intersil Corporation 1999 IRFP240 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFP240 200 200 20 12 80 ±20 150 1.2 5 10 -55 to 150 300 260 .





Part

IRFP240

Description

N-Channel Power MOSFET



Feature


IRFP240 Data Sheet July 1999 File Number 2087.4 20A, 200V, 0.180 Ohm, N-Channe l Power MOSFET This N-Channel enhanceme nt mode silicon gate power field effec t transistor is an advanced power MOSFE T designed, tested, and guaranteed to w ithstand a specified level of energy i n the breakdown avalanche mode of opera tion. All of these power MOSFETs are de signed for application.
Manufacture

Intersil Corporation

Datasheet
Download IRFP240 Datasheet




 IRFP240
Data Sheet
IRFP240
July 1999 File Number 2087.4
20A, 200V, 0.180 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17422.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP240
TO-247
IRFP240
NOTE: When ordering, include the entire part number.
Features
• 20A, 200V
• rDS(ON) = 0.180
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
4-317
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999




 IRFP240
IRFP240
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFP240
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200
200
20
12
80
±20
150
1.2
V
V
A
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
510
-55 to 150
300
260
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
LD
VGS = 0V, ID = 250µA (Figure 10)
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = 11V (Figure 7)
VGS = ±20V
VGS = 10V, ID = 10A (Figures 8, 9)
VDS 10V, ID = 11A
VDD = 100V, ID 18A, RGS = 9.1, VGS = 10V,
RL = 5.4
MOSFET Switching Times are Essentially
Independent of Operating Temperature
VGS = 10V, ID = 18A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
Measured between the
Contact Screw on
Header that is Closer to
Source and Gate Pins
and Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
Internal Source Inductance
LS Measured from the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
G
LD
LS
MIN
200
2.0
-
-
20
-
-
6.7
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.14
11
14
51
45
36
43
10
32
1275
500
160
5.0
12.5
MAX
-
4.0
25
250
-
±100
0.18
-
21
77
68
54
60
-
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
nH
Junction to Case
Junction to Ambient
RθJC
RθJA
Free Air Operation
S
-
-
0.83
oC/W
- - 30 oC/W
4-318




 IRFP240
IRFP240
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
D
MIN TYP MAX UNITS
- - 20 A
- - 80 A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 18A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs
--
120 250
1.3 2.6
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 1.9mH, RGS = 50, peak IAS = 20A.
2.0
530
5.6
V
ns
µC
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 50 100
TC, CASE TEMPERATURE (oC)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
16
12
8
4
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-2 SINGLE PULSE
10-130-5
10-4
PDM
t1
t2 t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
0.1
1
10
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-319




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