(PDF) IC61LV12816 Datasheet PDF | ICSI





IC61LV12816 Datasheet PDF

Part Number IC61LV12816
Description 128K x 16 Hight Speed SRAM with 3.3V
Manufacture ICSI
Total Page 13 Pages
PDF Download Download IC61LV12816 Datasheet PDF

Features: Datasheet pdf IC61LV12816 Document Title 128K x 16 Hig ht Speed SRAM with 3.3V Revision Histo ry Revision No 0A 0B 1 Draft Date Rema rk September 12,2001 April 23,2004 His tory Initial Draft Revise typo on page 6 2 3 4 5 6 7 8 9 10 11 12 The attach ed datasheets are provided by ICSI. Int egrated Circuit Solution Inc reserve th e right to change the specifications an d products. ICSI will answer to your qu estions about device. If you have any q uestions, please contact the ICSI offic es. Integrated Circuit Solution, Inc. AHSR024-0B 04/23/2004 1 IC61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM WI TH 3.3V SUPPLY FEATURES • • • • • High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation TTL and CMOS compatible interface levels S ingle 3.3V ± 10%power supply Fully sta tic operation: no clock or refresh requ ired • Three state outputs • Data c ontrol for upper and lower bytes • In dustrial temperature available DESCRIP TION The ICSI IC61LV12816 is a high-speed, 2,097,152-bit static RAM organized as.

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IC61LV12816 datasheet
IC61LV12816
Document Title
128K x 16 Hight Speed SRAM with 3.3V
Revision History
Revision No
History
0A Initial Draft
0B Revise typo on page 6
Draft Date
Remark
September 12,2001
April 23,2004
1
2
3
4
5
6
7
8
9
10
11
12
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution, Inc.
AHSR024-0B 04/23/2004
1

IC61LV12816 datasheet
IC61LV12816
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
FEATURES
• High-speed access time: 8, 10, 12, and 15 ns
• CMOS low power operation
• TTL and CMOS compatible interface levels
• Single 3.3V ± 10%power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ICSI IC61LV12816 is a high-speed, 2,097,152-bit static
RAM organized as 131,072 words by 16 bits. It is fabricated
using ICSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IC61LV12816 is packaged in the JEDEC standard 44-pin
400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TF-
BGA.
A0-A16
DECODER
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
128K x 16
MEMORY ARRAY
COLUMN I/O
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution, Inc.
2 Integrated Circuit Solution, Inc.
AHSR024-0B 04/23/2004





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