128K x 16 Hight Speed SRAM
IC61LV12816
Document Title
128K x 16 Hight Speed SRAM with 3.3V
Revision History
Revision No
0A 0B
1
Draft Date Remark...
Description
IC61LV12816
Document Title
128K x 16 Hight Speed SRAM with 3.3V
Revision History
Revision No
0A 0B
1
Draft Date Remark
September 12,2001 April 23,2004
History
Initial Draft Revise typo on page 6
2 3 4 5 6 7 8 9 10 11 12
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution, Inc.
AHSR024-0B 04/23/2004
1
IC61LV12816
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation TTL and CMOS compatible interface levels Single 3.3V ± 10%power supply Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available
DESCRIPTION The ICSI IC61LV12816 is a high-speed, 2,097,152-bit static
RAM organized as 131,072 words by 16 bits. It is fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) c...
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