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KBE00S009M-D411

Samsung semiconductor

1Gb NAND x 2 + 256Mb Mobile SDRAM x 2

KBE00S009M-D411 MCP MEMORY MCP Specification 1Gb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVID...


Samsung semiconductor

KBE00S009M-D411

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KBE00S009M-D411 MCP MEMORY MCP Specification 1Gb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. Revision 1.0 May 2005 1 KBE00S009M-D411 Document Title MCP MEMORY Multi-Chip Package MEMORY 1G Bit (128Mx8) Nand Flash*2 / 256M Bit (4Mx16x4Banks) Mobile SDRAM*2 Revision No. History 0.0 Initial issue. - 2Gb NAND DDP M-Die_ Ver 0.0 - 512Mb M-SDR DDP F-Die_Ver 1.0 - Changed operating voltage : page 3 .... Ver 0.2 - Changed the technical note : page 15,16 - Finalize Draft Date March 27, 2005 Remark Preliminary 1.0 May 27, 2005 Final Note : For more de...




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