JAN2N5416

TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices 2N5415 2N5415S 2N5416 2N5416S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N5415 200 200 2N5416 300 350 Units Vdc Vdc Vdc Adc W W 0 C Unit C/W 6.0 1.0 0.75 10 -65 to +200 Max. 17.5 TO- 5* 2N5415, 2N5416 THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 4.28 mW/0C for TA > +250C 2) Derate linearly 57.1 mW/0C for TC > +250C 0 2N5415S, 2N5416S TO-39* (TO-205AD) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Cutoff Current VCE = 150 Vdc VCE = 200 Vdc VCE = 250 Vdc VCE = 300 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Collector-Emitter Cutoff Current VCE = 200 Vdc, VBE = 1.5 Vdc VCE = 300 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 175 Vdc VCB = 280 Vdc Collector-Base Cutoff Current VCB = 200 Vdc VCB = 350 Vdc 2N5415 2N5415 2N5416 2N5416 50 1.0 50 1.0 20 50 50 50 50 500 500 µAdc mAdc µAdc mAdc µAdc µAdc µAdc µAdc ICEO IEBO 2N5415 2N5416 2N5415 2N5416 2N5415 2N5416 ICEX ICBO1 ICBO2 µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (9...