JAN2N5684

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/466 Devices 2N5683 2N5684 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation (1) Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC 2N5683 60 60 2N5684 80 80 Unit Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W *See appendix A for package outline @ TC = 250C @ TC = 1000C Operating & Storage Junction Temperature Range 5.0 15 50 300 171 -65 to +200 Max. 0.584 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 0 TO-3* (TO-204AA) 1) Derate linearly 1.715 W/0C between TC = +250C and TC = +2000C ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 30 Vdc VCE = 40 Vdc Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N5683 2N5684 2N5683 2N5684 2N5683 2N5684 2N5683 2N5684 V(BR)CEO 60 80 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Vdc ICEO µAdc ICEX µAdc ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5683, 2N5684 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ...