NTHS5443

NTHS5443 MOSFET – Power, P-Channel, ChipFET -20 V, -4.9 A Features Low RDS(on) for Higher Efficiency Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board Space Pb−Free Package is Available Applications Power Management in Portable and Battery−Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Steady Symbol 5 secs State Unit Drain−Source Voltage Gate−Source Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Note 1) Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, Tstg −20 "12 −4.9 −3.6 −3.5 −2.6 "15 −4.9 −3.6 2.5 1.3 1.3 0.7 −55 to +150 V V A A A W °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces). http://onsemi.com V(BR)DSS −20 V RDS(on) TYP 56 mW @ −4.5 ID MAX −4.9 A S G D P−Channel MOSFET 8 1 ChipFET CASE 1206A STYLE 1 PIN CONNECTIONS MARKING DIAGRAM D8 D7 D6 S5 1D 2D 3D 4G 1 2 3 4 A4 MG G 8 7 6 5 A4 = S...