MB81ES171625

FUJITSU SEMICONDUCTOR DATA SHEET DS05-11408-3E MEMORY CMOS × 512 K × 16 BIT / 2 × 256 K × 32 BIT SINGLE DATA RATE I/F FCRAMTM(Extended Temp. Version) 2 Consumer/Embedded Application Specific Memory for SiP MB81ES171625/173225-15-X s DESCRIPTION The Fujitsu MB81ES171625/173225 is a Fast Cycle Random Access Memory (FCRAM*) containing 16,777,216 bit memory cells accessible in a 2×512K×16 bit / 2×256K×32 bit format. The MB81ES171625/173225 features a fully synchronous operation referenced to a positive edge clock same as that of SDRAM operation, whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81ES171625/173225 is utilized using a Fujitsu advanced FCRAM core technology and designed for low power consumption and low voltage operation than regular synchronous DRAM (SDRAM). The MB81ES171625/173225 is dedicated for SiP (System in a Package), and ideally suited for various embedded/ consumer applications including digital AVs, and image processing where a large band width and low power consumption memory is needed. * : FCRAM is a trademark of Fujitsu Limited, Japan. s PRODUCT LINEUP Parameter Clock Frequency (Max) Burst Mode Cycle Time (Min) Access Time From Clock (Max) XRAS Cycle Time (Min) Operating Current (Max) (IDD1) Power Down Mode Current (Max) (IDD2P) Self-refresh Current (Max) (IDD6) CL = 1 CL = 2 CL = 1 CL = 2 MB81ES171625/173225-15-X 66.7 MHz 30 ns 15 ns 27 ns 12 ns 75 ns 30 mA 1 mA 5 m...