PMF280UN

PMF280UN N-channel µTrenchMOS™ ultra low level FET Rev. 01 — 27 February 2004 M3D102 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Low threshold voltage. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 0.56 W s ID ≤ 1.02 A s RDSon ≤ 340 mΩ. 2. Pinning information Table 1: Pin 1 2 3 Pinning - SOT323 (SC-70), simplified outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2 MBC870 Simplified outline 3 Symbol d MBB076 s SOT323 (SC-70) Philips Semiconductors PMF280UN N-channel µTrenchMOS™ ultra low level FET 3. Ordering information Table 2: Ordering information Package Name PMF280UN SC-70 Description Plastic surface mounted package; 3 leads Version SOT323 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 Tsp = 100 °C; VGS ...