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PS7200B-1A Dataheets PDF



Part Number PS7200B-1A
Manufacturers NEC
Logo NEC
Description 1-ch Optical Coupled MOSFET
Datasheet PS7200B-1A DatasheetPS7200B-1A Datasheet (PDF)

DATA SHEET Solid State Relay OCMOS FET PS7200B-1A 4-PIN SOP 1.0 Ω LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200B-1A is a low on-state resistance solid state relay containing GaAs LEDs on the light emitting side (input side) and MOS FETs on the output side. It is suitable for high-frequency signal control due to its low C × R, low on-state resistance, and low off-state leakage current. FEATURES • Low C × R (C × R = 32 pF • Ω) • Low on-state resistance (Ron = 1.0 Ω.

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DATA SHEET Solid State Relay OCMOS FET PS7200B-1A 4-PIN SOP 1.0 Ω LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200B-1A is a low on-state resistance solid state relay containing GaAs LEDs on the light emitting side (input side) and MOS FETs on the output side. It is suitable for high-frequency signal control due to its low C × R, low on-state resistance, and low off-state leakage current. FEATURES • Low C × R (C × R = 32 pF • Ω) • Low on-state resistance (Ron = 1.0 Ω TYP.) • Low off-state leakage current (ILoff = 0.1 nA TYP.) • High-speed turn-on time (ton = 0.05 ms TYP.) • 1 channel type (1 a output) • Low LED operating current (IF = 2 mA) • Designed for AC/DC switching line changer • Small and thin package (4-pin SOP, Height = 2.1 mm) • Low offset voltage • Ordering number of taping product: PS7200B-1A-E3, E4, F3, F4 • UL approved: File No. E72422 (S) • BSI approved: No. 8241/8242 • CSA approved: No. CA 101391 APPLICATIONS • Measurement equipment The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P12637EJ4V0DS00 (4th edition) Date Published October 1999 NS CP (K) Printed in Japan The mark • shows major revised points. © 1997, 1999 PS7200B-1A PACKAGE DIMENSIONS in millimeters 4.0±0.5 TOP VIEW 4 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET 1 2 7.0±0.3 4.4 2.05+0.08 –0.05 0.15+0.10 –0.05 0.05+0.08 –0.05 2.54 0.40+0.10 –0.05 0.25 M 0.5±0.3 2 Data Sheet P12637EJ4V0DS00 PS7200B-1A ORDERING INFORMATION Part Number PS7200B-1A PS7200B-1A-E3 PS7200B-1A-E4 PS7200B-1A-F3 PS7200B-1A-F4 Embossed Tape 3 500 pcs/reel Package 4-pin SOP Packing Style Magazine case 100 pcs Embossed Tape 900 pcs/reel Application Part Number PS7200B-1A *1 *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Diode Forward Current (DC) Reverse Voltage Power Dissipation Peak Forward Current MOS FET Break Down Voltage Continuous Load Current Pulse Load Current (AC/DC Connection) Power Dissipation Isolation Voltage *3 *2 *1 Symbol IF VR PD IFP VL IL ILP PD BV PT TA Tstg Ratings 50 5.0 50 1 40 250 500 100 1 500 150 −40 to +80 −40 to +100 Unit mA V mW A V mA mA mW Vr.m.s. mW °C °C Total Power Dissipation Operating Ambient Temperature Storage Temperature *1 PW = 100 µs, Duty Cycle = 1 % *2 PW = 100 ms, 1 shot *3 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output Data Sheet P12637EJ4V0DS00 3 PS7200B-1A RECOMMENDED OPERATING CONDITIONS (TA = 25 °C) Parameter LED Operating Current LED Off Voltage Symbol IF VF MIN. 2 0 TYP. 10 MAX. 20 0.5 Unit mA V ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Forward Voltage Reverse Current MOS FET Off-state Leakage Current Output Capacitance Coupled LED On-state Current On-state Resistance Symbol VF IR ILoff Cout IFon Ron1 Ron2 Turn-on Time *1 Conditions IF = 10 mA VR = 5 V VD = 40 V VD = 0 V, f = 1 MHz IL = 250 mA IF = 10 mA, IL = 10 mA IF = 10 mA, IL = 250 mA, t ≤ 10 ms IF = 10 mA, VO = 5 V, PW ≥ 10 ms MIN. TYP. 1.2 MAX. 1.4 5.0 Unit V µA nA pF 0.1 32 100 2.0 1.0 1.5 mA Ω ton toff RI-O CI-O 0.05 0.02 1.0 0.2 ms Turn-off Time *1 Isolation Resistance Isolation Capacitance VI-O = 1.0 kVDC V = 0 V, f = 1 MHz 10 9 Ω 0.5 pF *1 Test Circuit for Switching Time IF Pulse Input VL Input 50 % 0 VO = 5 V Input monitor Rin RL VO monitor Output 90 % 10 % ton toff 4 Data Sheet P12637EJ4V0DS00 PS7200B-1A TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATURE 100 Maximum Forward Current IF (mA) Maximum Load Current IL (mA) MAXIMUM LOAD CURRENT vs. AMBIENT TEMPERATURE 300 250 200 150 100 50 0 –25 80 60 40 20 0 –25 0 25 50 7580 100 0 25 50 7580 100 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD VOLTAGE vs. AMBIENT TEMPERATURE 1.6 Output Capacitance Cout (pF) OUTPUT CAPACITANCE vs. APPLIED VOLTAGE 50 f = 1 MHz Forward Voltage VF (V) 1.4 IF = 50 mA 1.2 30 mA 20 mA 10 mA 5 mA 1 mA 40 30 20 1.0 10 0.8 –25 0 25 50 75 100 0 5 10 15 20 25 30 Ambient Temperature TA (˚C) Applied Voltage VD (V) OFF-STATE LEAKAGE CURRENT vs. APPLIED VOLTAGE 10–6 Off-state Leakage Current ILoff (A) LOAD CURRENT vs. LOAD VOLTAGE 200 IF = 10 mA 10 10 –7 Load Current IL (mA) TA = 80 ˚C –8 100 10–9 25 ˚C 10 –10 –1.0 –0.5 0 0.5 –100 1.0 10–11 –200 10–12 0 10 20 30 40 50 Load Voltage VL (V) Applied Voltage VD (V) Data Sheet P12637EJ4V0DS00 5 PS7200B-1A NORMALIZED ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE 3.0 Normalized On-state Resistance Ron ON-STATE RESISTANCE DISTRIBUTION 30 n = 50 pcs, IF = 10 mA, IL = 10 mA 2.5 2.0 1.5 1.0 0.5 0.0 –25 Normalized to 1.0 at T.


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