SUP65P06-20

SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) –60 rDS(on) (W) 0.020 ID (A) –65a TO-220AB S TO-263 G DRAIN connected to TAB G D S Top View SUP65P06-20 G D S D Top View SUB65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 125_C (TO-263)c PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IAR EAR Symbol VGS Limit "20 –65a –39 –200 –60 180 250d 3.7 –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70289 S-05111—Rev. C, 10-Dec-01 www.vishay.com Free Air (TO-220AB) Symbol RthJA RthJA RthJC Limit 40 62.5 0.6 Unit _C/W 2-1 SUP/SUB65P06-20 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = –250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –60 V, VGS = 0 V Zero Gate Voltage Drai...