SUP65P04-15

SUP/SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) –40 0.023 @ VGS = –4.5 V –50 rDS(on) (W) 0.015 @ VGS = –10 V ID (A) –65 TO-220AB S TO-263 G DRAIN connected to TAB G G D S Top View SUP65P04-15 SUB65P04-15 P-Channel MOSFET D S Top View D ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)b TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit –40 "20 –65 –37 Unit V A –240 –60 180 120c W 3.75 –55 to 175 _C mJ Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)b Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Duty cycle v 1%. b. When mounted on 1” square PCB (FR-4 material). c. See SOA curve for voltage derating. Document Number: 71174 S-00831—Rev. A, 01-May-00 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC 62.5 1.25 Symbol RthJA Limit 40 Unit _C/W 2-1 SUP/SUB65P04-15 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = –250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –40 V, VGS = 0 V Zero Gate Voltage Drain Z G...