SUP57N20-33

SUP57N20-33 Vishay Siliconix N-Channel 200-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 200 0.033 at VGS = 10 V ID (A) 57 TO-220AB FEATURES TrenchFET® Power MOSFET 175 °C Junction Temperature APPLICATIONS Isolated DC/DC converters - Primary-Side Switch D Available RoHS* COMPLIANT DRAIN connected to TAB GD S Top View Ordering Information: SUP57N20-33 SUP57N20-33-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Pulse Avalanche Energya L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72100 S-71662-Rev. B, 06-Aug-07 Symbol RthJA RthJC Limit 200 ± 20 57 33 140 35 61 300b 3.75 - 55 to 175 Limit 40 0.5 Unit V A mJ W °C Unit °C/W www.vishay.com 1 SUP57N20-33 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage...