SUP/SUB75N06-08
N-Channel Enhancement-Mode Transistors
Product Summary
V(BR)DSS (V)
60 TO-220AB TO-263
G DRAIN connected...
SUP/SUB75N06-08
N-Channel Enhancement-Mode
Transistors
Product Summary
V(BR)DSS (V)
60 TO-220AB TO-263
G DRAIN connected to TAB G D S Top View SUB75N06-08 S N-Channel MOSFET
rDS(on) (W)
0.008
ID (A)
75a
D
G D S Top View SUP75N06-08
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Parameter
Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C
Symbol
VGS ID IDM IAR EAR PD TJ, Tstg
Limit
"20 75a 55 240 60 280 187c 3.7 –55 to 175
Unit
V
A
mJ W _C
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
PCB Mount (TO-263)d Junction to Ambient Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document # 70283. A SPICE Model data sheet is available for this product (FaxBack document #70527). RthJA RthJC
Symbol
Limit
40 62.5 0.8
Unit
_C/W
Siliconix S-47969—Rev. D, 08-Jul-96
1
SUP/SUB75N06-08
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter Static
DrainĆSource Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 ...
